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Depth profile investigation of β-FeSi2 formed in Si (100) by high fluence implantation of 50 keV Fe ion and post-thermal vacuum annealing

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Citation

Lakshantha, W. J., Kummari, V. C., Reinert, T., McDaniel, F. D., & Rout, B. (2014). Depth profile investigation of β-FeSi2 formed in Si (100) by high fluence implantation of 50 keV Fe ion and post-thermal vacuum annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 332, 33-36. doi:10.1016/j.nimb.2014.02.024.


Cite as: http://hdl.handle.net/21.11116/0000-0004-CDE7-1
Abstract
A single phase polycrystalline β-FeSi2 layer has been synthesized at the near surface region by implantation in Si(1 0 0) of a high fluence (∼1017 atoms/cm2) of 50 keV Fe ions and subsequent thermal annealing in vacuum at 800 °C. The depth profile of the implanted Fe atoms in Si(1 0 0) were simulated by the widely used transportation of ions in matter (TRIM) computer code as well as by the dynamic transportation of ions in matter code (T-DYN). The simulated depth profile predictions for this heavy ion implantation process were experimentally verified using Rutherford Backscattering Spectrometry (RBS) and X-ray Photoelectron Spectroscopy (XPS) in combination with Ar-ion etching. The formation of the β-FeSi2 phase was monitored by X-ray diffraction measurements. The T-DYN simulations show better agreement with the experimental Fe depth profile results than the static TRIM simulations. The experimental and T-DYN simulated results show an asymmetric distribution of Fe concentrated more toward the surface region of the Si substrate.