Characterization of defects in n-type 4̑extitH-SiC after high-energy N ion 
implantation by RBS-channeling and Raman spectroscopy

Kummari, Venkata C.; Reinert, Tilo; Jiang, Weilin; McDaniel, Floyd D.; Rout, Bibhudutta

doi:10.1016/j.nimb.2014.02.023

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Characterization of defects in n-type 4̑extitH-SiC after high-energy N ion implantation by RBS-channeling and Raman spectroscopy

MPS-Authors

There are no MPG-Authors in the publication available

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Kummari, V. C., Reinert, T., Jiang, W., McDaniel, F. D., & Rout, B. (2014). Characterization of defects in n-type 4̑extitH-SiC after high-energy N ion implantation by RBS-channeling and Raman spectroscopy. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 332, 28-32. doi:10.1016/j.nimb.2014.02.023.

Cite as: https://hdl.handle.net/21.11116/0000-0004-CDEB-D

Abstract

Implantation with 1 MeV N ions was performed at room temperature in n-type 4H-SiC (0 0 0 1) at four implantation fluences (or doses in dpa (displacements per atom) at the damage peak) of 1.5 × 1013 (0.0034), 7.8 × 1013 (0.018), 1.5 × 1014 (0.034), and 7.8 × 1014 (0.178) ions/cm2, respectively. The evolution of disorder was studied using Rutherford backscattering spectrometry in channeling mode (RBS-C), Raman spectroscopy, and optical transmission. The disorder in the Si sub-lattice was found to be less than 10% for the dpa of 0.0034 and 0.0178 and increased to 40% and 60% for the dpa of 0.034 and 0.178 respectively. The normalized Raman intensity In, shows disorder of 41%, 69%, 77% and 100% for the dpa of 0.0034, 0.0178, 0.034 and 0.178, respectively. In this paper, the characterization of the defects produced due to the nitrogen implantation in 4H-SiC are presented and the results are discussed.