Co-regulation of the copper vacancy concentration and point defects leading to 
the enhanced thermoelectric performance of Cu3In5Te9-based chalcogenides

Li, Min; Luo, Yong; Hu, Xiaojuan; Han, Zhong-Kang; Liu, Xianglian; Cui, Jiaolin

doi:10.1039/C9RA06565B

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Co-regulation of the copper vacancy concentration and point defects leading to the enhanced thermoelectric performance of Cu₃In₅Te₉-based chalcogenides

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Hu, Xiaojuan
NOMAD, Fritz Haber Institute, Max Planck Society;

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Han, Zhong-Kang
NOMAD, Fritz Haber Institute, Max Planck Society;

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Citation

Li, M., Luo, Y., Hu, X., Han, Z.-K., Liu, X., & Cui, J. (2019). Co-regulation of the copper vacancy concentration and point defects leading to the enhanced thermoelectric performance of Cu₃In₅Te₉-based chalcogenides. RSC Advances, 9(54), 31747-31752. doi:10.1039/C9RA06565B.

Cite as: https://hdl.handle.net/21.11116/0000-0004-E28A-1

Abstract

Copper vacancy concentration (V_c) in ternary Cu–In–Te chalcogenides is an important factor to engineer carrier concentration (n_H) and thermoelectric performance. However, it is not sufficient to regulate the phonon scattering in the Cu₃In₅Te₉-based chalcogenides. In this work we manipulate the V_c value and point defects simultaneously through addition of Cu along with Ga substitution for In in Cu₃In₅Te₉, and thereby increase the carrier concentration and reduce the lattice thermal conductivity. This strategy finally enables us to achieve ∼60% enhancement of the TE figure of merit (ZT) at V_c = 0.078 compared with the pristine Cu₃In₅Te₉. It is also used as guidance to achieve the high TE performance of the ternary chalcogenides.