Normally-Off Operation of Lateral Field-Effect Transistors Fabricated from 
Ultrapure GaN/AlGaN Heterostructures

Schmult, Stefan; Wirth, Steffen; Solovyev, Victor V.; Hentschel, Rico; Wachowiak, Andre; Scheinert, Tobias; Grosser, Andreas; Kukushkin, Igor V.; Mikolajick, Thomas

doi:10.1002/pssa.201900732

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Normally-Off Operation of Lateral Field-Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures

MPS-Authors

/persons/resource/persons126910

Wirth, Steffen
Steffen Wirth, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Schmult, S., Wirth, S., Solovyev, V. V., Hentschel, R., Wachowiak, A., Scheinert, T., et al. (2020). Normally-Off Operation of Lateral Field-Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures. Physica Status Solidi A, 1900732, pp. 1-5. doi:10.1002/pssa.201900732.

Cite as: https://hdl.handle.net/21.11116/0000-0005-8148-8

Abstract

The presence of a 2D electron gas (2DEG) in GaN/AlxGa1-xN heterostructures with low aluminum mole fraction is found to depend on the residual background impurity concentration in the GaN/AlGaN layer stack. At a residual donor level of 2 x 10(16) cm(-3), a 2DEG is absent at 300 K in dark environment. Such a 2DEG can be generated at the GaN/AlGaN interface either by illumination with ultraviolet light or by applying an electrostatic potential. The latter results in inherently normally-off switching characteristics of lateral field-effect transistors.