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Journal Article

Enhancement of catalytic effect for CNT growth at low temperature by PECVD

MPS-Authors

Labbaye,  Thibault
Max Planck Institute for Astronomy, Max Planck Society and Cooperation Partners;

Kovacevic,  Eva
Max Planck Institute for Astronomy, Max Planck Society and Cooperation Partners;

Lecas,  Thomas
Max Planck Institute for Astronomy, Max Planck Society and Cooperation Partners;

Ammar,  Mohamed-Ramzi
Max Planck Institute for Astronomy, Max Planck Society and Cooperation Partners;

Canizarès,  Aurélien
Max Planck Institute for Astronomy, Max Planck Society and Cooperation Partners;

Raimboux,  Nicole
Max Planck Institute for Astronomy, Max Planck Society and Cooperation Partners;

Strunskus,  Thomas
Max Planck Institute for Astronomy, Max Planck Society and Cooperation Partners;

Jaeger,  Cornelia
Max Planck Institute for Astronomy, Max Planck Society and Cooperation Partners;

Simon,  Patrick
Max Planck Institute for Astronomy, Max Planck Society and Cooperation Partners;

Boulmer-Leborgne,  Chantal
Max Planck Institute for Astronomy, Max Planck Society and Cooperation Partners;

External Resource

https://ui.adsabs.harvard.edu/abs/2018ApSS..453..436L
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Citation

Labbaye, T., Kovacevic, E., Lecas, T., Ammar, M.-R., Canizarès, A., Raimboux, N., et al. (2018). Enhancement of catalytic effect for CNT growth at low temperature by PECVD. Applied Surface Science, 453, 436-441.


Cite as: https://hdl.handle.net/21.11116/0000-0005-CCA8-8
Abstract
Lowering the temperature of CNT synthesis before any attempts of integration is a technical challenge. The improvement of CNT carpet growth on Ni/TiN/SiO2/Si by previously reducing the size of Ni particles using H2 plasma prior to be exposed to H2:C2H4 plasma is studied. Different techniques, SEM, in situ Raman, NEXAFS, XPS and TEM were combined to investigate the growth rate and the quality of CNT films. An original use of in situ Raman spectroscopy allowed us to determine the increase of sample surface temperature in contact with H2 plasma through Si anharmonicity. Finally it was possible to grow CNT carpets by PECVD with a process temperature of 480 °C.