Help Privacy Policy Disclaimer
  Advanced SearchBrowse




Journal Article

Thermal and nonthermal melting of III-V compound semiconductors


Li,  Z.
International Max Planck Research School for Ultrafast Imaging & Structural Dynamics (IMPRS-UFAST), Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free Electron Laser Science;
Miller Group, Atomically Resolved Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;

External Resource
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)

(Publisher version), 2MB

Supplementary Material (public)
There is no public supplementary material available

Medvedev, N., Fang, Z., Xia, C., & Li, Z. (2019). Thermal and nonthermal melting of III-V compound semiconductors. Physical Review B, 99(14): 144101. doi:10.1103/PhysRevB.99.144101.

Cite as: https://hdl.handle.net/21.11116/0000-0005-D586-3
We study theoretically the response of group III-V compound semiconductors (AlAs, AlP, GaAs, GaP, GaSb) to free-electron laser irradiation, identifying their damage thresholds. The employed hybrid code XTANT is capable of modeling both thermal and nonthermal effects under ultrafast electronic excitation. It allowed us to reveal common trends in the studied materials: all but the AlAs III-V compounds studied here exhibit a phase transition into a metallic disordered state of lower density than the solid phase via a thermal phase transition. This transition is instigated by electron-ion coupling at doses below the nonthermal melting. Irradiated AlAs showed two possible phases produced: low-density and high-density liquid. We demonstrate that the transferrable tight-binding method within the Born-Oppenheimer approximation significantly overestimates the damage threshold predicting only nonthermal melting in comparison to a non-Born-Oppenheimer scheme, which accounts for both effects and their interplay.