Berry curvature engineering by gating two-dimensional antiferromagnets

Du, S.; Tang, P.; Li, J.; Lin, Z.; Xu, Y.; Duan, W.; Rubio, A.

doi:10.1103/PhysRevResearch.2.022025

Item

ITEM ACTIONSEXPORT

Add to Basket

Please note that a newer version of this item is available:
https://pure.mpg.de/pubman/item/item_3223684_4

DetailsSummary

Released

Journal Article

Berry curvature engineering by gating two-dimensional antiferromagnets

MPS-Authors

/persons/resource/persons230818

Tang, P.
Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free-Electron Laser Science;

/persons/resource/persons22028

Rubio, A.
Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free-Electron Laser Science;
Nano-Bio Spectroscopy Group and ETSF, Dpto. Fisica de Materiales, Universidad del País Vasco UPV/EHU;
Center for Computational Quantum Physics, Flatiron Institute;

External Resource

https://dx.doi.org/10.1103/PhysRevResearch.2.022025
(Publisher version)

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

PhysRevResearch.2.022025.pdf
(Publisher version), 2MB

Supplementary Material (public)

supplementary_Materials.pdf
(Supplementary material), 4MB

Citation

Du, S., Tang, P., Li, J., Lin, Z., Xu, Y., Duan, W., et al. (2020). Berry curvature engineering by gating two-dimensional antiferromagnets. Physical Review Research, 2(2): 022025(R). doi:10.1103/PhysRevResearch.2.022025.

Cite as: https://hdl.handle.net/21.11116/0000-0006-53FA-3

Abstract

Recent advances in tuning electronic, magnetic, and topological properties of two-dimensional (2D) magnets have opened a new frontier in the study of quantum physics and promised exciting possibilities for future quantum technologies. In this study, we find that the dual-gate technology can well tune the electronic and topological properties of antiferromagnetic (AFM) even septuple-layer (SL) MnBi₂Te₄ thin films. Under an out-of-plane electric field that breaks PT symmetry, the Berry curvature of the thin film could be engineered efficiently, resulting in a huge change of anomalous Hall (AH) signal. Beyond the critical electric field, the double-SL MnBi₂Te₄ thin film becomes a Chern insulator with a high Chern number of 3. We further demonstrate that such 2D material can be used as an AFM switch via electric-field control of the AH signal. These discoveries inspire the design of low-power memory prototypes for future AFM spintronic applications.