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Berry curvature engineering by gating two-dimensional antiferromagnets

MPG-Autoren
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Tang,  P.
Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free-Electron Laser Science;

/persons/resource/persons22028

Rubio,  A.
Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free-Electron Laser Science;
Nano-Bio Spectroscopy Group and ETSF, Dpto. Fisica de Materiales, Universidad del País Vasco UPV/EHU;
Center for Computational Quantum Physics, Flatiron Institute;

Externe Ressourcen

https://dx.doi.org/10.1103/PhysRevResearch.2.022025
(Verlagsversion)

Volltexte (beschränkter Zugriff)
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Volltexte (frei zugänglich)

PhysRevResearch.2.022025.pdf
(Verlagsversion), 2MB

Ergänzendes Material (frei zugänglich)

supplementary_Materials.pdf
(Ergänzendes Material), 4MB

Zitation

Du, S., Tang, P., Li, J., Lin, Z., Xu, Y., Duan, W., et al. (2020). Berry curvature engineering by gating two-dimensional antiferromagnets. Physical Review Research, 2(2): 022025(R). doi:10.1103/PhysRevResearch.2.022025.


Zitierlink: https://hdl.handle.net/21.11116/0000-0006-53FA-3
Zusammenfassung
Recent advances in tuning electronic, magnetic, and topological properties of two-dimensional (2D) magnets have opened a new frontier in the study of quantum physics and promised exciting possibilities for future quantum technologies. In this study, we find that the dual-gate technology can well tune the electronic and topological properties of antiferromagnetic (AFM) even septuple-layer (SL) MnBi2Te4 thin films. Under an out-of-plane electric field that breaks PT symmetry, the Berry curvature of the thin film could be engineered efficiently, resulting in a huge change of anomalous Hall (AH) signal. Beyond the critical electric field, the double-SL MnBi2Te4 thin film becomes a Chern insulator with a high Chern number of 3. We further demonstrate that such 2D material can be used as an AFM switch via electric-field control of the AH signal. These discoveries inspire the design of low-power memory prototypes for future AFM spintronic applications.