English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
Add to Basket
  DetailsSummary

Released
Journal Article

Angstrom-Resolved Interfacial Structure in Buried Organic-Inorganic Junctions

MPS-Authors
/persons/resource/persons230430

Zürch,  Michael
Physical Chemistry, Fritz Haber Institute, Max Planck Society;
Department of Chemistry, University of California;
Materials Sciences Division, Lawrence Berkeley National Laboratory;
Institute for Optics and Quantum Electronics, Abbe Center of Photonics, University of Jena;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)

2005.01905.pdf
(Preprint), 1014KB

PhysRevLett.127.096801.pdf
(Publisher version), 706KB

Supplementary Material (public)
There is no public supplementary material available
Citation

Schwartz, C. P., Raj, S. L., Jamnuch, S., Hull, C. J., Miotti, P., Lam, R. K., et al. (2021). Angstrom-Resolved Interfacial Structure in Buried Organic-Inorganic Junctions. Physical Review Letters, 127(9): 096801. doi:10.1103/PhysRevLett.127.096801.


Cite as: https://hdl.handle.net/21.11116/0000-0006-611B-F
Abstract
Charge transport processes at interfaces play a crucial role in many processes. Here, the first soft x-ray second harmonic generation (SXR SHG) interfacial spectrum of a buried interface (boron–Parylene N) is reported. SXR SHG shows distinct spectral features that are not observed in x-ray absorption spectra, demonstrating its extraordinary interfacial sensitivity. Comparison to electronic structure calculations indicates a boron-organic separation distance of 1.9 Å, with changes of less than 1 Å resulting in easily detectable SXR SHG spectral shifts (ca. hundreds of milli-electron volts).