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Journal Article

Angstrom-Resolved Interfacial Structure in Buried Organic-Inorganic Junctions

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Zürch,  Michael
Physical Chemistry, Fritz Haber Institute, Max Planck Society;
Department of Chemistry, University of California;
Materials Sciences Division, Lawrence Berkeley National Laboratory;
Institute for Optics and Quantum Electronics, Abbe Center of Photonics, University of Jena;

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2005.01905.pdf
(Preprint), 1014KB

PhysRevLett.127.096801.pdf
(Publisher version), 706KB

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Citation

Schwartz, C. P., Raj, S. L., Jamnuch, S., Hull, C. J., Miotti, P., Lam, R. K., et al. (2021). Angstrom-Resolved Interfacial Structure in Buried Organic-Inorganic Junctions. Physical Review Letters, 127(9): 096801. doi:10.1103/PhysRevLett.127.096801.


Cite as: https://hdl.handle.net/21.11116/0000-0006-611B-F
Abstract
Charge transport processes at interfaces play a crucial role in many processes. Here, the first soft x-ray second harmonic generation (SXR SHG) interfacial spectrum of a buried interface (boron–Parylene N) is reported. SXR SHG shows distinct spectral features that are not observed in x-ray absorption spectra, demonstrating its extraordinary interfacial sensitivity. Comparison to electronic structure calculations indicates a boron-organic separation distance of 1.9 Å, with changes of less than 1 Å resulting in easily detectable SXR SHG spectral shifts (ca. hundreds of milli-electron volts).