Image charges in semiconductor quantum wells: Effect on exciton binding energy

Tran Thoai, D. B.; Zimmermann, R.; Grundmann, M.; Bimberg, D.

doi:10.1103/PhysRevB.42.5906

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Image charges in semiconductor quantum wells: Effect on exciton binding energy

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Tran Thoai, D. B.
Fritz Haber Institute, Max Planck Society;

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Tran Thoai, D. B., Zimmermann, R., Grundmann, M., & Bimberg, D. (1990). Image charges in semiconductor quantum wells: Effect on exciton binding energy. Physical Review B, 42(9), 5906-5909. doi:10.1103/PhysRevB.42.5906.

Cite as: https://hdl.handle.net/21.11116/0000-0006-7628-9

Abstract

Binding energies of excitons in a quantum-well structure are calculated including fully the effects of image charges, finite barriers, the z correlation of electrons and holes, and anisotropic hole masses. The influence of discontinuous masses and discontinuous dielectric constants across the interfaces is evaluated in detail: While the mass difference becomes important only when the excitonic wave function penetrates into the barrier, the image charges appreciably modify the Coulomb interaction and therefore influence the exciton binding energy even at well widths larger than the exciton Bohr radius. Results for technologically important, particular material systems are presented.