Interfacing topological insulators and ferrimagnets: Bi2Te3 and Fe3O4 
heterostructures grown by molecular beam epitaxy

Pereira, V. M.; Wu, C. N.; Knight, C.-A.; Choa, A.; Tjeng, L. H.; Altendorf, S. G.

doi:10.1063/5.0010339

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Interfacing topological insulators and ferrimagnets: Bi₂Te₃ and Fe₃O₄ heterostructures grown by molecular beam epitaxy

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Pereira, V. M.
Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Wu, C. N.
Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Knight, C.-A.
Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Choa, A.
Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Tjeng, L. H.
Liu Hao Tjeng, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Altendorf, S. G.
Simone Altendorf, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Pereira, V. M., Wu, C. N., Knight, C.-A., Choa, A., Tjeng, L. H., & Altendorf, S. G. (2020). Interfacing topological insulators and ferrimagnets: Bi₂Te₃ and Fe₃O₄ heterostructures grown by molecular beam epitaxy. APL Materials, 8(7): 071114, pp. 1-10. doi:10.1063/5.0010339.

Cite as: https://hdl.handle.net/21.11116/0000-0006-D217-3

Abstract

Relying on the magnetism induced by the proximity effect in heterostructures of topological insulators and magnetic insulators is one of the promising routes to achieve the quantum anomalous Hall effect. Here, we investigate heterostructures of Bi(2)Te(3)and Fe3O4. By growing two different types of heterostructures by molecular beam epitaxy, Fe(3)O(4)on Bi(2)Te(3)and Bi(2)Te(3)on Fe3O4, we explore differences in chemical stability, crystalline quality, electronic structure, and transport properties. We find the heterostructure Bi(2)Te(3)on Fe(3)O(4)to be a more viable approach, with transport signatures in agreement with a gap opening in the topological surface states.