Excitation wavelength independent sensitized Er3+ concentration in as-deposited 
and low temperature annealed Si-rich SiO2 films

Savchyn, Oleksandr; Todi, Ravi M.; Coffey, Kevin R.; Ono, Luis K.; Roldan Cuenya, Beatriz; Kik, Pieter G.

doi:10.1063/1.3272271

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Excitation wavelength independent sensitized Er³⁺ concentration in as-deposited and low temperature annealed Si-rich SiO₂ films

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Savchyn, O., Todi, R. M., Coffey, K. R., Ono, L. K., Roldan Cuenya, B., & Kik, P. G. (2009). Excitation wavelength independent sensitized Er³⁺ concentration in as-deposited and low temperature annealed Si-rich SiO₂ films. Applied Physics Letters, 95(23): 231109. doi:10.1063/1.3272271.

Cite as: https://hdl.handle.net/21.11116/0000-0006-D1C2-2

Abstract

Erbium sensitization is observed in as-deposited Er³⁺ doped Si-rich SiO₂, ruling out the involvement of Si nanocrystals in the Er³⁺ excitation in these samples. The Er³⁺excitation cross section in this material is similar within a factor 3 to that of samples annealed at 600 ° C under 355 and 532 nm excitation. The density of sensitized Er³⁺ ions is shown to be excitation wavelength independent, while the shape of the Er³⁺ excitation spectra is governed by a wavelength dependent Er³⁺ excitation cross section. These findings enable the use of a broad range of wavelengths for the efficient excitation of this gain medium.