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Excitation wavelength-independent sensitized Er3+ concentration in as-deposited and low temperature annealed Si-rich SiO2 films

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Citation

Savchyn, O., Todi, R. M., Coffey, K. R., Ono, L. K., Roldan Cuenya, B., & Kik, P. G. (2009). Excitation wavelength-independent sensitized Er3+ concentration in as-deposited and low temperature annealed Si-rich SiO2 films. Applied Physics Letters, 95(23): 231109 (2009). doi:10.1063/1.3272271.


Cite as: http://hdl.handle.net/21.11116/0000-0006-D1C2-2
Abstract
Erbium sensitization is observed in as-deposited Er3+ doped Si-rich SiO2, ruling out the involvement of Si nanocrystals in the Er3+ excitation in these samples. The Er3+excitation cross section in this material is similar within a factor 3 to that of samples annealed at 600 ° C under 355 and 532 nm excitation. The density of sensitized Er3+ ions is shown to be excitation wavelength independent, while the shape of the Er3+ excitation spectra is governed by a wavelength dependent Er3+ excitation cross section. These findings enable the use of a broad range of wavelengths for the efficient excitation of this gain medium.