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Colloidal properties of the metal-free semiconductor graphitic carbon nitride

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Kumru,  Baris
Baris Kumru, Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society;

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Antonietti,  Markus
Markus Antonietti, Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society;

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Kumru, B., & Antonietti, M. (2020). Colloidal properties of the metal-free semiconductor graphitic carbon nitride. Advances in Colloid and Interface Science, 283: 102229. doi:10.1016/j.cis.2020.102229.


Cite as: http://hdl.handle.net/21.11116/0000-0006-E02D-B
Abstract
The metal-free, polymeric semiconductor graphitic carbon nitride (g-CN) family is an emerging class of materials and has striking advantages compared to other semiconductors, i.e. ease of tunability, low cost and synthesis from abundant precursors in a chemical environment. Efforts have been done to improve the properties of g-CN, such as photocatalytic efficiency, designing novel composites, processability and scalability towards discovering novel applications as a remedy for the problems that we are facing today. Despite the fact that the main efforts to improve g-CN come from a catalysis perspective, many fundamental possibilities arise from the special colloidal properties of carbon nitride particles, from synthesis to applications. This review will display how typical colloid chemistry tools can be employed to make ‘better g-CNs’ and how up to now overseen properties can be levered by integrating a colloid and interface perspective into materials chemistry. Establishing a knowledge on the origins of colloidal behavior of g-CN will be the core of the review.