Epitaxial growth and interfacial structure of Sn on Si(1 1 1)-(7×7)

Roldan Cuenya, Beatriz; Doi, M.; Keune, Werner K.

doi:10.1016/S0039-6028(01)01662-4

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Epitaxial growth and interfacial structure of Sn on Si(1 1 1)-(7×7)

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Roldan Cuenya, B., Doi, M., & Keune, W. K. (2002). Epitaxial growth and interfacial structure of Sn on Si(1 1 1)-(7×7). Surface Science, 506(1-2), 33-46. doi:10.1016/S0039-6028(01)01662-4.

Cite as: https://hdl.handle.net/21.11116/0000-0006-EC29-3

Abstract

Room temperature stabilization of up to 3.5 ML epitaxial metastable α-Sn at the Si(1 1 1)-(7×7) surface is reported. The α-Sn layers remain stabilized at the interface even after the deposition of thick Sn layers that undergo the α-Sn→β-Sn transformation. Additionally, a small decrease in the s-electron density at the ¹¹⁹Sn nucleus is found for submonolayer of Sn at the Sn/Si(1 1 1)-(7×7) interface. The epitaxial relationship between thick β-Sn layers on Si(1 1 1) is also shown. The results were obtained by low and high energy electron diffraction and ¹¹⁹Sn conversion electron Mössbauer spectroscopy.