Deutsch
 
Hilfe Datenschutzhinweis Impressum
  DetailsucheBrowse
  1. Datensatz ansehen / 
  2. Datensatz Übersicht

Datensatz

DATENSATZ AKTIONENEXPORT
Zur Ablage hinzufügen
  Lokale TagsFreigabegeschichteDetailsÜbersicht

Freigegeben
Zeitschriftenartikel

Reactions at the Gd-Si(111)7×7 interface: Promotion of Si oxidation

MPG-Autoren
/persons/resource/persons248531

Cimino,  Roberto
Fritz Haber Institute, Max Planck Society;

Externe Ressourcen
Es sind keine externen Ressourcen hinterlegt
Volltexte (beschränkter Zugriff)
Für Ihren IP-Bereich sind aktuell keine Volltexte freigegeben.
Volltexte (frei zugänglich)

PhysRevB.42.11073.pdf
(Verlagsversion), 368KB

Ergänzendes Material (frei zugänglich)
Es sind keine frei zugänglichen Ergänzenden Materialien verfügbar
Zitation

Henle, W. A., Ramsey, M. G., Netzer, F. P., Cimino, R., Braun, W., & Witzel, S. (1990). Reactions at the Gd-Si(111)7×7 interface: Promotion of Si oxidation. Physical Review B, 42, 11073-11078. doi:10.1103/PhysRevB.42.11073.


Zitierlink: https://hdl.handle.net/21.11116/0000-0006-F65E-C
Zusammenfassung
The interactions of various Gd-Si(111) interfaces and surface phases of Gd silicides with oxygen have been investigated by uv and soft-x-ray photoelectron spectroscopy using synchrotron radiation and Auger-electron spectroscopy. At the ‘‘reacted’’ Gd-Si interfaces the room-temperature oxidation of Si is substantially enhanced. In contrast, the epitaxial Gd disilicide–type phases, which are formed after annealing the room-temperature interfaces at elevated temperature, are much less reactive towards O2; however, reaction can be initiated after an initial induction period. A pronounced dependence of the oxidation rate on Gd coverage is found, which emphasizes the importance of the concentration of Si atoms having reacted with Gd. The Gd component of the interface is also oxidized, and the oxidation product, which is characterized by a Si 2p core-level shift of ≃3–3.3 eV, is insulating with a band gap of several electron volts.