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Reconstructions of the GaAs (1 1 3) surface

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Setzer,  Carsten
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Platen,  Jutta
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Pristovsek, M., Menhal, H., Wehnert, T., Zettler, J.-T., Schmidtling, T., Esser, N. N., et al. (1998). Reconstructions of the GaAs (1 1 3) surface. Journal of Crystal Growth, 195(1-4), 1-5. doi:10.1016/S0022-0248(98)00695-2.


Cite as: https://hdl.handle.net/21.11116/0000-0007-1A50-2
Abstract
We investigated GaAs (1 1 3) surfaces prepared by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) with reflectance anisotropy spectroscopy (RAS) and low energy electron diffraction (LEED) and found two different static (non-growth) reconstructions: For many conditions the well known (8×1) reconstruction is observed, while under more arsenic rich conditions a reconstruction a p(1×1) symmetry shows up. The activation energy for the transition from the p(1×1) to the (8×1) reconstruction was determined to (1.50±0.02) eV. A structure model for the arsenic rich p(1×1) reconstruction is presented in accordance with the above findings.