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Journal Article

Thermal etching of GaAs (1 1 3) surfaces

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Scholz,  Stefan M.
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Setzer,  Carsten
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Scholz, S. M., Setzer, C., Jacobi, K., Schabert, F., & Rabe, J. P. (1998). Thermal etching of GaAs (1 1 3) surfaces. Journal of Materials Science: Materials in Electronics, 9, 115-119. doi:10.1023/A:1008857321897.


Cite as: https://hdl.handle.net/21.11116/0000-0007-0C36-0
Abstract
We discuss scanning electron micrographs and atomic force microscope images of thermally etched GaAs(1 1 3) surfaces. The GaAs(1 1 3)A and GaAs(1 1 3)B surfaces are compared. The polarity of the surface leads to a different morphology for the two surfaces after thermal etching. It is found that the Ga-enriched droplets, which form under As-deficient conditions at higher temperatures, are sitting on characteristic pedestals, which are different for the two faces. The facets occurring after this thermal etching process are identified. They represent thermally favourable surfaces under the arsenic-deficient conditions of the thermal etching process.