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LEED intensity and surface core level shift analysis ofthe MBE-prepared GaAs (1 ̅1 ̅1 ̅)B(2×2 ) surface

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Setzer,  Carsten
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Platen,  Jutta
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Bludau,  Horst
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Gierer,  Martin
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Over,  Herbert
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Setzer, C., Platen, J., Bludau, H., Gierer, M., Over, H., & Jacobi, K. (1998). LEED intensity and surface core level shift analysis ofthe MBE-prepared GaAs (1 ̅1 ̅1 ̅)B(2×2 ) surface. Surface Science, 402-404, 782-785. doi:10.1016/S0039-6028(97)01060-1.


Cite as: https://hdl.handle.net/21.11116/0000-0007-1179-E
Abstract
Using a recently developed MBE apparatus, the GaAs(1 ̅1 ̅1 ̅)B(2×2) surface was prepared and studied in situ by photoemission and LEED intensity analysis. The measured surface core level shifts of the Ga and As 3d core levels support the atomic geometry of the As-trimer model whose detailed structure was determined by LEED intensity analysis.