Band bending in the initial stages of Schottky-barrier formation for gallium on 
Si(113)

Althainz, P.; Myler, U.; Jacobi, Karl

doi:10.1103/PhysRevB.41.2849

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Band bending in the initial stages of Schottky-barrier formation for gallium on Si(113)

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Althainz, P.
Fritz Haber Institute, Max Planck Society;

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Myler, U.
Fritz Haber Institute, Max Planck Society;

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Jacobi, Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Althainz, P., Myler, U., & Jacobi, K. (1990). Band bending in the initial stages of Schottky-barrier formation for gallium on Si(113). Physical Review B, 41(5), 2849-2854. doi:10.1103/PhysRevB.41.2849.

Cite as: https://hdl.handle.net/21.11116/0000-0007-4372-D

Abstract

We present angle-resolved ultraviolet and soft-x-ray photoelectron spectroscopy results for the Schottky-barrier formation of Ga on p-type Si(113). For the first 0.08 monolayer of Ga, the band bending increases. For higher coverages, it decreases monotonically until it reaches its final value at about 2 monolayers. This change of band bending is found for a Si surface for the first time and supports a recent model calculation. The final barrier height is 0.32±0.10 eV, in good agreement with the values found for low-index surfaces.