Gallium Schottky-barrier formation of Si(113)

Althainz, P.; Myler, U.; Jacobi, Karl

doi:10.1016/0042-207X(90)90455-8

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Gallium Schottky-barrier formation of Si(113)

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Althainz, P.
Fritz Haber Institute, Max Planck Society;

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Myler, U.
Fritz Haber Institute, Max Planck Society;

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Jacobi, Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Althainz, P., Myler, U., & Jacobi, K. (1990). Gallium Schottky-barrier formation of Si(113). Vacuum, 41(1-3), 699-701. doi:10.1016/0042-207X(90)90455-8.

Cite as: https://hdl.handle.net/21.11116/0000-0007-436F-2

Abstract

The Si(113) surface of a p-type sample was studied by AES, LEED and ARUPS using synchrotron light. On the clean surface (3 × 2) and (3 × 1) LEED patterns were found. The (3 × 2) surface is characterized by a strong surface resonance 0.9 eV below E_F. The bands are bent downwards by 0.43 eV at room temperature. On this well defined surface the Schottky-barrier formation of Ga was investigated. For the first 0.08 monolayer of Ga the band bending increases. For higher coverages it decreases monotonically until it reaches its final value at about two monolayers. This change of band bending is found for a Si surface for the first time and supports a recent model calculation. The final barrier height is 0.32 ± 0.10 eV, in good agreement with the values found for low-index surfaces.