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The Weak 3D Topological Insulator Bi12Rh3Sn3I9

MPG-Autoren
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Ruck,  Michael
Michael Ruck, Max Planck Fellow, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Zitation

Lê Anh, M., Kaiser, M., Ghimire, M. P., Richter, M., Koepernik, K., Gruschwitz, M., et al. (2020). The Weak 3D Topological Insulator Bi12Rh3Sn3I9. Chemistry – A European Journal, 26(67), 15549-15557. doi:10.1002/chem.202001953.


Zitierlink: https://hdl.handle.net/21.11116/0000-0007-5C77-D
Zusammenfassung
Topological insulators (TIs) gained high interest due to their protected electronic surface states that allow dissipation-free electron and information transport. In consequence, TIs are recommended as materials for spintronics and quantum computing. Yet, the number of well-characterized TIs is rather limited. To contribute to this field of research, we focused on new bismuth-based subiodides and recently succeeded in synthesizing a new compound Bi12Rh3Sn3I9, which is structurally closely related to Bi14Rh3I9- a stable, layered material. In fact, Bi(14)Rh(3)I(9)is the first experimentally supported weak 3D TI. Both structures are composed of well-defined intermetallic layers of(infinity)(2)[(Bi4Rh)(3)I](2+)with topologically protected electronic edge-states. The fundamental difference between Bi(14)Rh(3)I(9)and Bi(12)Rh(3)Sn(3)I(9)lies in the composition and the arrangement of the anionic spacer. While the intermetallic 2D TI layers in Bi(14)Rh(3)I(9)are isolated by(infinity)(1)[Bi2I8](2-)chains, the isoelectronic substitution of bismuth(III) with tin(II) leads to(infinity)(2)[Sn3I8](2-)layers as anionic spacers. First transport experiments support the 2D character of this material class and revealed metallic conductivity.