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Topological phase transitions induced by disorder in magnetically doped (Bi, Sb)2 Te3 thin films

MPS-Authors
/persons/resource/persons230818

Tang,  P.
School of Materials Science and Engineering, Beihang University;
Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free Electron Laser Science;

/persons/resource/persons22028

Rubio,  A.
Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free Electron Laser Science;
Center for Computational Quantum Physics, Simons Foundation Flatiron Institute, New York;
Nano-Bio Spectroscopy Group, Departamento de Fisica de Materiales, Universidad del País Vasco, UPV/EHU;

/persons/resource/persons245033

Kennes,  D. M.
Institut für Theorie der Statistischen Physik, RWTH Aachen;
Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free Electron Laser Science;

External Ressource
Fulltext (public)

PhysRevB.102.201405.pdf
(Publisher version), 2MB

Supplementary Material (public)

SM.pdf
(Supplementary material), 997KB

Citation

Okugawa, T., Tang, P., Rubio, A., & Kennes, D. M. (2020). Topological phase transitions induced by disorder in magnetically doped (Bi, Sb)2 Te3 thin films. Physical Review B, 102(20): 201405. doi:10.1103/PhysRevB.102.201405.


Cite as: http://hdl.handle.net/21.11116/0000-0007-694E-D
Abstract
We study disorder induced topological phase transitions in magnetically doped (Bi, Sb)2 Te3 thin films by using large scale transport simulations of the conductance through a disordered region coupled to reservoirs in the quantum spin Hall regime. Besides the disorder strength, the rich phase diagram also strongly depends on the magnetic exchange field, the Fermi level, and the initial topological state in the undoped and clean limit of the films. In an initially trivial system at nonzero exchange field, varying the disorder strength can induce a sequence of transitions from a normal insulating to a quantum anomalous Hall, then a spin-Chern insulating, and finally an Anderson insulating state. In contrast, for a system which is initially in the topological phase, a similar sequence can be induced by the disorder, but only starting from the quantum anomalous Hall phase that is also stabilized by the weak disorder. Varying the Fermi level we find a similarly rich phase diagram, including transitions from the quantum anomalous Hall to the spin-Chern insulating state via a state that behaves as a mixture of a quantum anomalous Hall and a metallic state, akin to recent experimental reports.