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Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb

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Lin,  H.
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Molenkamp,  L. W.
Laurens Molenkamp, Max Planck Fellow, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Scheffler, L., Gas, K., Banik, S., Kamp, M., Knobel, J., Lin, H., et al. (2020). Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb. Physical Review Materials, 4(11): 114402, pp. 1-6. doi:10.1103/PhysRevMaterials.4.114402.


Cite as: http://hdl.handle.net/21.11116/0000-0007-7B7A-7
Abstract
We report the growth of CuMnSb thin films by molecular beam epitaxy on InAs (001) substrates. The CuMnSb layers are compressively strained (0.6 %) due to lattice mismatch. The thin films have a CO full width at halfmaximum of 7.7 arcsec according to high resolution x-ray diffraction, and a root-mean-square roughness of 0.14 nm as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a Neel temperature of 62 K, a Curie-Weiss temperature of -65 K, and an effective moment of 5.9 mu B/f.u. Transport measurements confirm the antiferromagnetic transition and show a residual resistivity at 4 K of 35 mu Omega cm.