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Journal Article

Compensation of Oxygen Doping in p-Type Organic Field-Effect Transistors Utilizing Immobilized n-Dopants

MPS-Authors
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Müllen,  Klaus
InnovationLab, Heidelberg, Germany;
Dept. Müllen: Synthetic Chemistry, MPI for Polymer Research, Max Planck Society;

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admt.202000556.pdf
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Citation

Barf, M., Benneckendorf, F. S., Reiser, P., Bäuerle, R., Köntges, W., Müller, L., et al. (2020). Compensation of Oxygen Doping in p-Type Organic Field-Effect Transistors Utilizing Immobilized n-Dopants. Advanced Materials Technologies, 2000556. doi:10.1002/admt.202000556.


Cite as: http://hdl.handle.net/21.11116/0000-0007-86B1-9
Abstract
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