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Silicon ISM X-ray absorption: the gaseous component

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Gatuzz,  E.
High Energy Astrophysics, MPI for Astrophysics, Max Planck Society;

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Citation

Gatuzz, E., Gorczyca, T. W., Hasoglu, M. F., Schulz, N. S., Corrales, L., & Mendoza, C. (2020). Silicon ISM X-ray absorption: the gaseous component. Monthly Notices of the Royal Astronomical Society, 498(1), L20-L24. doi:10.1093/mnrasl/slaa119.


Cite as: http://hdl.handle.net/21.11116/0000-0007-EE68-9
Abstract
We present a detailed analysis of the gaseous component of the Si K edge using high-resolution Chandra spectra of low-mass X-ray binaries. We fit the spectra with a modified version of the ISMabs model, including new photoabsorption cross-sections computed for all Si ionic species. We estimate column densities for Si i, Si ii, Si iii, Si xii, and Si xiii, which trace the warm, intermediate temperature, and hot phases of the Galactic interstellar medium. We find that the ionic fractions of the first two phases are similar. This may be due to the physical state of the plasma determined by the temperature or due to the presence of absorber material in the close vicinity of the sources. Our findings highlight the need for accurate modelling of the gaseous component before attempting to address the solid component.