Back-side-on-BOX heterogeneously integrated III-V-on-silicon O-Band distributed 
feedback lasers

Thiessen, Torrey; Mak, Jason C. C.; Da Fonseca, Jeremy; Ribaud, Karen; Jany, Christophe; Poon, Joyce; Menezo, Sylvie

doi:10.1109/JLT.2020.2978413

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Back-side-on-BOX heterogeneously integrated III-V-on-silicon O-Band distributed feedback lasers

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Poon, Joyce
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

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https://doi.org/10.1109/JLT.2020.2978413
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Citation

Thiessen, T., Mak, J. C. C., Da Fonseca, J., Ribaud, K., Jany, C., Poon, J., et al. (2020). Back-side-on-BOX heterogeneously integrated III-V-on-silicon O-Band distributed feedback lasers. Journal of Lightwave Technology, 38(11), 3000-3006. doi:10.1109/JLT.2020.2978413.

Cite as: https://hdl.handle.net/21.11116/0000-0008-20B9-3

Abstract

We introduce a new III-V-on-Silicon (Si) heterogeneous integration platform, where the III-V material is bonded to the back of a processed Si photonic wafer. This “Back-Side-on-Buried Oxide” (BSoBOX) process is fully compatible with active, multilayer Si photonics platforms. This article describes the process flow and reports on O-band hybrid distributed feedback (DFB) lasers of various grating periods fabricated on this platform. A comprehensive set of measurements show that the quarter-wave shifted DFB lasers have comparable performance to front-side platforms. Single-mode emission with a side mode suppression ratio around 50 dB was measured between 20 °C - 60 °C. The DFB lasers had threshold currents as low as 32 mA and produced output powers in the Si waveguide from a single-end of about 15 mW at 170 mA before the devices began to mode hop. Output powers of ~20 mW were measured before the onset of thermal roll-off and operation up to 80 °C was achieved. The characteristic temperatures and thermal impedance of the lasers were evaluated and future improvements are discussed.