Direct Observation of Charge Transfer between NOx and Monolayer MoS2 by 
Operando Scanning Photoelectron Microscopy

Jensen, Ingvild J. T.; Ali, Ayaz; Zeller, Patrick; Amati, Matteo; Schrade, Matthias; Vullum, Per Erik; Muñiz, Marta Benthem; Bisht, Prashant; Taniguchi, Takashi; Watanabe, Kenji; Mehta, Bodh Raj; Gregoratti, Luca; Belle, Branson D.

doi:10.1021/acsanm.1c00137

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Direct Observation of Charge Transfer between NO_x and Monolayer MoS₂ by Operando Scanning Photoelectron Microscopy

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Zeller, Patrick
Elettra Sincrotrone Trieste S.C.p.A.;
Helmholtz-Zentrum Berlin für Materialien and Energie GmbH, BESSY II;
Inorganic Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Jensen, I. J. T., Ali, A., Zeller, P., Amati, M., Schrade, M., Vullum, P. E., et al. (2021). Direct Observation of Charge Transfer between NO_x and Monolayer MoS₂ by Operando Scanning Photoelectron Microscopy. ACS Applied Nano Materials, 4(4), 3319-3324. doi:10.1021/acsanm.1c00137.

Cite as: https://hdl.handle.net/21.11116/0000-0008-2106-C

Abstract

Atomically thin transition-metal dichalcogenides (MoS₂, WSe₂, etc.) have long been touted as promising materials for gas detection because of their tunable band gaps; however, the sensing mechanism, based on a charge-transfer process, has not been fully explored. Here, we directly observe the effect of this charge transfer on the doping levels in MoS₂ upon exposure to NO_x by performing scanning photoelectron microscopy (SPEM) on a monolayer MoS₂ transistor under bias conditions in a gas environment. By a comparison of the operando SPEM maps of the transistor with and without exposure to NO_x gas, a downward shift in the Fermi level position could be detected, consistent with NO_x gas making the MoS₂ channel less n-type.