Back-side-on-BOX heterogeneously integrated III-V-on-silicon O-band 
discrete-mode lasers

Thiessen, Torrey; Menezo, Sylvie; Jany, Christophe; Mak, Jason C. C.; Poon, Joyce

doi:10.1364/OE.412839

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Journal Article

Back-side-on-BOX heterogeneously integrated III-V-on-silicon O-band discrete-mode lasers

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Poon, Joyce
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

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https://doi.org/10.1364/OE.412839
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oe-28-26-38579.pdf
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Citation

Thiessen, T., Menezo, S., Jany, C., Mak, J. C. C., & Poon, J. (2020). Back-side-on-BOX heterogeneously integrated III-V-on-silicon O-band discrete-mode lasers. Optics Express, 28(26), 38579-38591. doi:10.1364/OE.412839.

Cite as: http://hdl.handle.net/21.11116/0000-0008-20B2-A

Abstract

We demonstrate foundry-fabricated O-band III-V-on-silicon discrete-mode lasers. The laser fabrication follows the back-side-on-buried-oxide laser integration process and is compatible with complex, multilayer, silicon-on-insulator based platforms. A series of devices were characterized, with the best devices producing on-chip powers of nearly 20 mW with Lorentzian linewidths below 20 kHz and a side mode suppression ratio of at least 60 dB.