Back-side-on-BOX heterogeneous laser integration for fully integrated photonic 
circuits on silicon

Menezo, Sylvie; Thiessen, Torrey; El-Zammer, Georgio; Mak, Jason; Da Fonesca, Jérémy; Brianceau , Pierre; Szelag, Bertrand; Jany, Christophe; Poon, Joyce

doi:10.1049/cp.2019.0826

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Conference Paper

Back-side-on-BOX heterogeneous laser integration for fully integrated photonic circuits on silicon

MPS-Authors

Mak, Jason
Max Planck Institute of Microstructure Physics, Max Planck Society;

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Poon, Joyce
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

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https://ieeexplore.ieee.org/abstract/document/9125554
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Citation

Menezo, S., Thiessen, T., El-Zammer, G., Mak, J., Da Fonesca, J., Brianceau, P., et al. (2019). Back-side-on-BOX heterogeneous laser integration for fully integrated photonic circuits on silicon. In 45th European Conference on Optical Communication (ECOC 2019). doi:10.1049/cp.2019.0826.

Cite as: https://hdl.handle.net/21.11116/0000-0008-2266-F

Abstract

We present a fabrication flow integrating lasers at the backside of silicon-on-insulator wafers. It is expected to be compatible with integration of other material-layers and reduce the variance of lasers performance. A DFB laser fabricated accordingly exhibits a total waveguide-coupled power of 60mW at 160mA/20°C