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Temperature-Dependent Electronic Ground-State Charge Transfer in van der Waals Heterostructures

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Wang,  Haiyuan
NOMAD, Fritz Haber Institute, Max Planck Society;
Chaire de simulation à l'échelle atomique (CSEA), Ecole Polytechnique Fédérale de Lausanne (EPFL);

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Zacharias,  Marios
NOMAD, Fritz Haber Institute, Max Planck Society;
Department of Mechanical and Materials Science Engineering, Cyprus University of Technology;

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Maksimov,  Dmitrii
NOMAD, Fritz Haber Institute, Max Planck Society;
Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;

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Rossi,  Mariana
NOMAD, Fritz Haber Institute, Max Planck Society;
Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;

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2103.07962.pdf
(Preprint), 8MB

adma.202008677.pdf
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Citation

Park, S., Wang, H., Schultz, T., Shin, D., Ovsyannikov, R., Zacharias, M., et al. (2021). Temperature-Dependent Electronic Ground-State Charge Transfer in van der Waals Heterostructures. Advanced Materials, 33(29): 2008677. doi:10.1002/adma.202008677.


Cite as: https://hdl.handle.net/21.11116/0000-0008-3557-B
Abstract
Electronic charge rearrangement between components of a heterostructure is the fundamental principle to reach the electronic ground state. It is acknowledged that the density of states distribution of the components governs the amount of charge transfer, but a notable dependence on temperature has not yet been considered, particularly for weakly interacting systems. Here, we experimentally observe that the amount of ground state charge transfer in a van der Waals heterostructure formed by monolayer MoS2 sandwiched between graphite and a molecular electron acceptor layer increases by a factor of three when going from 7 K to room temperature. State-of-the-art electronic structure calculations of the full heterostructure that account for nuclear thermal fluctuations reveal intra-component electron-phonon coupling and inter-component electronic coupling as the key factors determining the amount of charge transfer. This conclusion is rationalized by a model applicable to multi-component van der Waals heterostructures.