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Journal Article

Subbandgap Photocurrent of a Ru‐Covered n‐GaAs|Acidic‐Electrolyte Junction

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Kolb,  Dieter M.
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Jung, C., & Kolb, D. M. (1990). Subbandgap Photocurrent of a Ru‐Covered n‐GaAs|Acidic‐Electrolyte Junction. Berichte der Bunsen-Gesellschaft für physikalische Chemie, 94(8), 861-866. doi:10.1002/bbpc.19900940809.


Cite as: https://hdl.handle.net/21.11116/0000-0008-5311-7
Abstract
The subbandgap photocurrent dependence on electrode potential and light energy has been investigated for the n‐GaAs(100) | 1 M HCl junction after surface modification by electroless deposition of ruthenium. A pronounced peak in the photocurrent‐potential curve was found for Ru‐treated electrodes between −0.6 and −0.1 V/SCE. This behaviour is explained in a model simulation for the photocurrent which takes into account the hole generation in a Ru‐induced surface state by absorption of subbandgap light.