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Abstract

Cu(In,Ga)Se2 (CIGSe)-based solar cells are promising candidates for efficient sunlight harvesting. However, their complex composition and microstructure can change under operation conditions, for instance heating from sun light illumination can lead to a degradation in performance. Here, we investigate the thermally-induced degradation processes in a set of CIGSe-based solar cells that were annealed at temperatures between 150 °C and 300 °C. Using correlative atom probe tomography (APT)/transmission electron microscope (TEM), we found that the buffer/absorber interface is not sharp but consists of an interfacial zone (2–6.5 nm wide) where a gradient of constituent elements belonging to the CdS buffer and CIGSe absorber appears. An enhanced short-range Cd in-diffusion inside the CIGSe was observed whenever a low Ga/(Ga + In) ratio (≤ 0.15) occurred at the interface. This might indicate the presence of Ga vacancies as a channeling defect for Cd in-diffusion inside the CIGSe layer leading to a buried p/n-homojunction. We evidence that a considerable amount of Cd is found inside the CIGSe layer at annealing temperatures higher than 150 °C. Further investigations of the elemental redistribution inside the CIGSe layer combined with C–V measurements support the formation of CdCu + donor like defects deep inside the p-type CIGSe which lead to a strong compensation of the CIGSe layer and hence to strong deterioration of cell efficiency at annealing temperatures higher than 200 °C. Hence, understanding the degradation processes in Cu(In,Ga)Se2 (CIGSe)-based solar cells opens new opportunities for further improvement of the long-term device performance. © 2021