English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

Variable Repetition Rate THz Source for Ultrafast Scanning Tunneling Microscopy

MPS-Authors
/persons/resource/persons259992

Abdo,  M.
University of Stuttgart, Institute for Functional Matter and Quantum Technologies;
Max Planck Institute for Solid State Research;
Dynamics of Nanoelectronic Systems, Independent Research Groups, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;

/persons/resource/persons133864

Rolf-Pissarczyk,  S.
Max Planck Institute for Solid State Research;
Dynamics of Nanoelectronic Systems, Independent Research Groups, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;

/persons/resource/persons133858

Loth,  S.
University of Stuttgart, Institute for Functional Matter and Quantum Technologies;
Max Planck Institute for Solid State Research;
Dynamics of Nanoelectronic Systems, Independent Research Groups, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;

External Resource
Fulltext (public)

acsphotonics.0c01652.pdf
(Publisher version), 3MB

Supplementary Material (public)
There is no public supplementary material available
Citation

Abdo, M., Sheng, S., Rolf-Pissarczyk, S., Arnhold, L., Burgess, J. A. J., Isobe, M., et al. (2021). Variable Repetition Rate THz Source for Ultrafast Scanning Tunneling Microscopy. ACS Photonics, 8(3), 702-708. doi:10.1021/acsphotonics.0c01652.


Cite as: http://hdl.handle.net/21.11116/0000-0008-4B79-D
Abstract
Broadband THz pulses enable ultrafast electronic transport experiments on the nanoscale by coupling THz electric fields into the devices with antennas, asperities, or scanning probe tips. Here, we design a versatile THz source optimized for driving the highly resistive tunnel junction of a scanning tunneling microscope. The source uses optical rectification in lithium niobate to generate arbitrary THz pulse trains with freely adjustable repetition rates between 0.5 and 41 MHz. These induce subpicosecond voltage transients in the tunnel junction with peak amplitudes between 0.1 and 12 V, achieving a conversion efficiency of 0.4 V/(kV/cm) from far-field THz peak electric field strength to peak junction voltage in the STM. Tunnel currents in the quantum limit of less than one electron per THz pulse are readily detected at multi-MHz repetition rates. The ability to tune between high pulse energy and high signal fidelity makes this THz source design effective for exploration of ultrafast and atomic-scale electron dynamics.