English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
Add to Basket
  Local TagsRelease HistoryDetailsSummary

Released
Journal Article

Microscopic manipulation of ferroelectric domains in SnSe monolayers at room temperature

MPS-Authors

Chang,  Kai
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons259915

Küster,  Felix
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons260870

Ji,  Jing-Rong
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;
International Max Planck Research School for Science and Technology of Nano-Systems, Max Planck Institute of Microstructure Physics, Max Planck Society;

Zhang,  Jia-Lu
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons259921

Sessi,  Paolo
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons245678

Parkin,  Stuart S. P.       
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

External Resource

https://doi.org/10.1021/acs.nanolett.0c02357
(Publisher version)

Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)

acs.nanolett.0c02357.pdf
(Publisher version), 9MB

Supplementary Material (public)
There is no public supplementary material available
Citation

Chang, K., Küster, F., Miller, B. J., Ji, J.-R., Zhang, J.-L., Sessi, P., et al. (2020). Microscopic manipulation of ferroelectric domains in SnSe monolayers at room temperature. Nano Letters, 20(9), 6590-6597. doi:10.1021/acs.nanolett.0c02357.


Cite as: https://hdl.handle.net/21.11116/0000-0008-8343-8
Abstract
Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and nonvolatile electronic devices based on vertical and coplanar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarization. Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene and the demonstration of controlled room-temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM). This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which are difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important technological applications.