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Journal Article

Atomic layer deposition of cobalt phosphide for efficient water splitting

MPS-Authors

Hagen,  Dirk J.
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Kostanovskiy,  Ilya
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Parkin,  Stuart       
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

External Resource

https://doi.org/10.1002/anie.202002280
(Publisher version)

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anie.202002280.pdf
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Citation

Zhang, H., Hagen, D. J., Li, X., Graff, A., Heyroth, F., Fuhrmann, B., et al. (2020). Atomic layer deposition of cobalt phosphide for efficient water splitting. Angewandte Chemie International Edition, 59(39), 17172-17176. doi:10.1002/anie.202002280.


Cite as: https://hdl.handle.net/21.11116/0000-0008-890E-F
Abstract
Transition‐metal phosphides (TMP) prepared by atomic layer deposition (ALD) are reported for the first time. Ultrathin Co‐P films were deposited by using PH3 plasma as the phosphorus source and an extra H2 plasma step to remove excess P in the growing films. The optimized ALD process proceeded by self‐limited layer‐by‐layer growth, and the deposited Co‐P films were highly pure and smooth. The Co‐P films deposited via ALD exhibited better electrochemical and photoelectrochemical hydrogen evolution reaction (HER) activities than similar Co‐P films prepared by the traditional post‐phosphorization method. Moreover, the deposition of ultrathin Co‐P films on periodic trenches was demonstrated, which highlights the broad and promising potential application of this ALD process for a conformal coating of TMP films on complex three‐dimensional (3D) architectures.