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Theoretical and experimental evidence for the intrinsic three-dimensional Dirac state in Cu2HgSnSe4

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Liu,  Defa
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Citation

Lv, Y.-Y., Cao, L., Yuan, Q.-Q., Chen, S.-S., Shi, Z.-Q., Li, Q.-Y., et al. (2019). Theoretical and experimental evidence for the intrinsic three-dimensional Dirac state in Cu2HgSnSe4. Physical Review B, 100(19): 195147. doi:10.1103/PhysRevB.100.195147.


Cite as: https://hdl.handle.net/21.11116/0000-0009-0C97-0
Abstract
Three-dimensional (3D) Dirac and Weyl semimetals are quantum states that have emerged in physics recently. But their intrinsic transport properties are quite elusive because of either the coexistence of Schrödinger fermions or the deviation of linear dispersion at Fermi level in previously proposed Dirac and Weyl semimetals. Here, we provide the theoretical and experimental evidences of an intrinsic Dirac state in the quaternary chalcogenide Cu2HgSnSe4 that has bared linear dispersions in conduction bands. Scanning tunneling spectroscopy reveals the quadratic energy-dependent density of states within an extremely large energy range (∼400meV) on conduction bands of Cu2HgSnSe4, which is self-consistent with linear dispersion detected by angle-resolved photoemission spectroscopy. In electron-doped Cu2HgSnSe4, positive magnetoresistance at low magnetic field B(<2.5T) and negative magnetoresistance under high B are observed, which is attributed to the chiral anomaly effect. However, conventional negative magnetoresistance is observed in hole-doped Cu2HgSnSe4, which is attributed to weak localization broken by B. Remarkably, the carrier mobility has a 105-fold decrease when the Fermi level is adjusted from conduction to valence bands. Our results suggest that Cu2HgSnSe4 not only provides a playground for exploring intrinsic properties of 3D Dirac fermions but also is promising for developing high-speed, low-dissipation electronic devices.