Band structure engineering of chemically tunable LnSbTe (Ln = La, Ce, Pr)

Weiland, Ashley; Chaparro, David G.; Vergniory, Maia G.; Derunova, Elena; Yoon, Jiho; Oswald, Iain W. H.; McCandless, Gregory T.; Ali, Mazhar; Chan, Julia Y.

doi:10.1063/1.5123396

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Band structure engineering of chemically tunable LnSbTe (Ln = La, Ce, Pr)

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Derunova, Elena
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Yoon, Jiho
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Ali, Mazhar
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Citation

Weiland, A., Chaparro, D. G., Vergniory, M. G., Derunova, E., Yoon, J., Oswald, I. W. H., et al. (2019). Band structure engineering of chemically tunable LnSbTe (Ln = La, Ce, Pr). APL Materials, 7(10): 101113. doi:10.1063/1.5123396.

Cite as: https://hdl.handle.net/21.11116/0000-0009-0CA4-1

Abstract

The ZrSiS family of compounds has garnered interest as Dirac nodal-line semimetals and offers an approach to study structural motifs coupled with electronic features, such as Dirac crossings. CeSbTe, of the ZrSiS/PbFCl structure type, is of interest due to its magnetically tunable topological states. The crystal structure consists of rare earth capped square nets separating the magnetic Ce–Te layers. In this work, we report the single crystal growth, magnetic properties, and electronic structures of LnSb_1−xBi_xTe (Ln = La, Ce, Pr; x ∼ 0.2) and CeBiTe, adopting the CeSbTe crystal structure, and the implication of tuning the electronic properties by chemical substitution.