Boosting n-type doping levels of Ge with co-doping by integrating 
plasma-assisted atomic layer deposition and flash annealing process

Baik, Seunghun; Kwon, Hyeokjin; Paeng, Chuck; Zhang, He; Kalkofen, Bodo; Jang, Jae Eun; Kim, Y. S.; Kwon, Hyuk-Jun

doi:10.1109/LED.2019.2931404

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Boosting n-type doping levels of Ge with co-doping by integrating plasma-assisted atomic layer deposition and flash annealing process

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Kalkofen, Bodo
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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https://doi.org/10.1109/LED.2019.2931404
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Citation

Baik, S., Kwon, H., Paeng, C., Zhang, H., Kalkofen, B., Jang, J. E., et al. (2019). Boosting n-type doping levels of Ge with co-doping by integrating plasma-assisted atomic layer deposition and flash annealing process. IEEE Electron Device Letters, 40(9), 1507-1510. doi:10.1109/LED.2019.2931404.

Cite as: https://hdl.handle.net/21.11116/0000-0008-D9F8-C

Abstract

To achieve a high concentration of dopants over 1 × 10²⁰ cm^-3 on germanium (Ge), co-doping with phosphorus (P) and antimony (Sb) by plasma assisted atomic layer deposition (PALD) and a subsequent annealing process [rapid thermal annealing process (RTP) or flash lamp annealing process (FLP)] are proposed and investigated. We found that the PALD stacked co-doping (PO_x /SiO_y and Sb₂O₅ ) films were uniformly deposited. Using the conventional RTP method led to a low doping concentration (<;3 × 10¹⁹ cm^-3 ). However, FLP with a Xenon (Xe) lamp (lamp duration: 3 ms; energy density: 56 J/cm² ) raised the surface temperature to nearly 800 °C. Furthermore, high concentrations of both P and Sb (>1 × 10²⁰ cm^-3 ) were achieved at the surface. Our findings suggest that the FLP with high energy in a short amount of time (~3 ms) can create the peak power effect and the co-doping effect. The evidence shows that these effects contribute to enhancing n-type doping levels in the Ge structure.