Epitaxial growth, structural characterization, and exchange bias of 
noncollinear antiferromagnetic Mn3Ir thin films

Taylor, James M.; Lesne, Edouard; Markou, Anastasios; Dejene, Fasil Kida; Ernst, Benedikt; Kalache, Adel; Rana, Kumari Gaurav; Kumar, Neeraj; Werner, Peter; Felser, Claudia; Parkin, Stuart S. P.

doi:10.1103/PhysRevMaterials.3.074409

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Epitaxial growth, structural characterization, and exchange bias of noncollinear antiferromagnetic Mn₃Ir thin films

MPS-Authors

Taylor, James M.
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

Lesne, Edouard
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

Dejene, Fasil Kida
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

Rana, Kumari Gaurav
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

Kumar, Neeraj
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

Werner, Peter
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Parkin, Stuart S. P.
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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https://doi.org/10.1103/PhysRevMaterials.3.074409
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Citation

Taylor, J. M., Lesne, E., Markou, A., Dejene, F. K., Ernst, B., Kalache, A., et al. (2019). Epitaxial growth, structural characterization, and exchange bias of noncollinear antiferromagnetic Mn₃Ir thin films. Physical Review Materials, 3(7): 074409. doi:10.1103/PhysRevMaterials.3.074409.

Cite as: https://hdl.handle.net/21.11116/0000-0008-DF79-6

Abstract

Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the noncollinear antiferromagnet Mn₃Ir. Using epitaxial engineering on MgO (001) and Al₂O₃ (0001) single-crystal substrates, we control the growth of cubic γ-Mn₃Ir in both (001) and (111) crystal orientations, and discuss the optimization of growth conditions to achieve high-quality crystal structures with low surface roughness. Exchange bias is studied in bilayers, with exchange bias fields as large as -29 mT (equivalent to a unidirectional anisotropy constant of 0.115erg cm^-2 or 11.5nJ cm^-2) measured in Mn₃Ir (111)/Permalloy heterostructures at room temperature. In addition, a distinct dependence of blocking temperature on in-plane crystallographic direction in Mn₃Ir (001)/Permalloy bilayers is observed. These findings are discussed in the context of antiferromagnetic domain structures, and will inform progress towards chiral antiferromagnetic spintronic devices.