Electric field control of phase transition and tunable resistive switching in 
SrFeO2.5

Saleem, Muhammad S; Cui, Bin; Song, Cheng; Sun, Yiming; Gu, Youdi; Zhang, Ruiqi; Fayaz, Muhammad U; Zhou, Xiaofeng; Werner, Peter; Parkin, Stuart S. P.; Pan, Feng

doi:10.1021/acsami.8b18251

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Electric field control of phase transition and tunable resistive switching in SrFeO_2.5

MPS-Authors

Cui, Bin
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

Werner, Peter
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Parkin, Stuart S. P.
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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https://doi.org/10.1021/acsami.8b18251
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Citation

Saleem, M. S., Cui, B., Song, C., Sun, Y., Gu, Y., Zhang, R., et al. (2019). Electric field control of phase transition and tunable resistive switching in SrFeO_2.5. ACS Applied Materials and Interfaces, 11(6), 6581-6588. doi:10.1021/acsami.8b18251.

Cite as: https://hdl.handle.net/21.11116/0000-0009-0CCE-3

Abstract

SrFeO_x (SFO_x) compounds exhibit ionic conduction and oxygen-related phase transformation, having potential applications in solid oxide fuel cells, smart windows, and memristive devices. The phase transformation in SFO_x typically requires a thermal annealing process under various pressure conditions, hindering their practical applications. Here, we have achieved a reversible phase transition from brownmillerite (BM) to perovskite (PV) in SrFeO_2.5 (SFO_2.5) films through ionic liquid (IL) gating. The real-time phase transformation is imaged using in situ high-resolution transmission electron microscopy. The magnetic transition in SFO2.5 is identified by fabricating an assisted La_0.7Sr_0.3MnO₃ (LSMO) bottom layer. The IL-gating-converted PV phase of a SrFeO_3−δ (SFO_3−δ) layer shows a ferromagnetic-like behavior but applies a huge pinning effect on LSMO magnetic moments, which consequently leads to a prominent exchange bias phenomenon, suggesting an uncompensated helical magnetic structure of SFO_3−δ. On the other hand, the suppression of both magnetic and exchange coupling signals for a BM-phased SFO_2.5 layer elucidates its fully compensated G-type antiferromagnetic nature. We also demonstrated that the phase transition by IL gating is an effective pathway to tune the resistive switching parameters, such as set, reset, and high/low-resistance ratio in SFO_2.5-based resistive random-access memory devices.