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Journal Article

In-plane ferroelectric tunnel junction


Chang,  Kai
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Shen, H., Liu, J., Chang, K., & Fu, L. (2019). In-plane ferroelectric tunnel junction. Physical Review Applied, 11(2): 024048. doi:10.1103/PhysRevApplied.11.024048.

Cite as: https://hdl.handle.net/21.11116/0000-0009-124B-F
Ferroelectric materals are an important platform for the realization of nonvolatile memories. So far, existing ferroelectric memory devices have utilized out-of-plane polarization in ferroelectric thin films. In this paper, we propose a type of random-access memory (RAM) based on ferroelectric thin films with in-plane polarization, called an “in-plane ferroelectric tunnel junction.” Apart from nonvolatility, lower power usage, and a faster writing operation compared with traditional dynamic RAMs, our proposal has the advantage of a faster reading operation and a nondestructive reading process, thus overcoming the write-after-read problem that exists widely in current ferroelectric RAMs. The recent discovered room-temperature ferroelectric IV-VI semiconductor thin films are a promising material platform for the realization of our proposal.