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SiO2/Si(001) studied by time-resolved valence band photoemission at MHz repetition rates: Linear and nonlinear excitation of surface photovoltage

MPS-Authors

Kamrla,  Robin
Max Planck Institute of Microstructure Physics, Max Planck Society;

Trützschler,  Andreas
Max Planck Institute of Microstructure Physics, Max Planck Society;

Huth,  Michael
Max Planck Institute of Microstructure Physics, Max Planck Society;

Chiang,  Cheng-Tien
Max Planck Institute of Microstructure Physics, Max Planck Society;

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Schumann,  Frank O.
Max Planck Institute of Microstructure Physics, Max Planck Society;

Widdra,  Wolf
Max Planck Institute of Microstructure Physics, Max Planck Society;

External Resource

https://doi.org/10.1116/1.5082188
(Publisher version)

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Citation

Kamrla, R., Trützschler, A., Huth, M., Chiang, C.-T., Schumann, F. O., & Widdra, W. (2019). SiO2/Si(001) studied by time-resolved valence band photoemission at MHz repetition rates: Linear and nonlinear excitation of surface photovoltage. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 37(2): 021101. doi:10.1116/1.5082188.


Cite as: https://hdl.handle.net/21.11116/0000-0009-0CC3-E
Abstract
The authors investigate the fluence and doping dependence of the surface photovoltage (SPV) shifts at SiO2/Si(001) interfaces by time-resolved photoelectron spectroscopy. Charge carriers are excited by pumping photon energies of hνpump = 1.2 and 2.4 eV and probed by high-order harmonics of hνprobe = 22.6 eV at 0.2 and 0.7 MHz repetition rates. The authors observe SPV shifts of the non-bonding O2p state by 240 meV for SiO2/p-Si and by -140 meV for SiO2/n-Si upon pumping with hνpump = 1.2 eV, and their decay rate is estimated from time-resolved measurements. Moreover, the authors observe a striking pumping fluence dependence of SPV at these interfaces, which indicates charge carrier generation by both linear and nonlinear optical excitations.