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Journal Article

Electromagnetic functionalization of wide-bandgap dielectric oxides by boron interstitial doping

MPS-Authors

Ostanin,  Sergey
Max Planck Institute of Microstructure Physics, Max Planck Society;

Chiang,  Cheng-Tien
Max Planck Institute of Microstructure Physics, Max Planck Society;

Mertig,  Ingrid
Max Planck Institute of Microstructure Physics, Max Planck Society;

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Citation

Park, D.-S., Rees, G. J., Wang, H., Rata, D., Morris, A. J., Maznichenko, I. V., et al. (2018). Electromagnetic functionalization of wide-bandgap dielectric oxides by boron interstitial doping. Advanced Materials, 30(39): 1802025. doi:10.1002/adma.201802025.


Cite as: https://hdl.handle.net/21.11116/0000-0009-2B43-C
Abstract
A surge in interest of oxide-based materials is testimony for their potential utility in a wide array of device applications and offers a fascinating landscape for tuning the functional properties through a variety of physical and chemical parameters. In particular, selective electronic/defect doping has been demonstrated to be vital in tailoring novel functionalities, not existing in the bulk host oxides. Here, an extraordinary interstitial doping effect is demonstrated centered around a light element, boron (B). The host matrix is a novel composite system, made from discrete bulk LaAlO3:LaBO3 compounds. The findings show a spontaneous ordering of the interstitial B cations within the host LaAlO3 lattices, and subsequent spin-polarized charge injection into the neighboring cations. This leads to a series of remarkable cation-dominated electrical switching and high-temperature ferromagnetism. Hence, the induced interstitial doping serves to transform a nonmagnetic insulating bulk oxide into a ferromagnetic ionic–electronic conductor. This unique interstitial B doping effect upon its control is proposed to be as a general route for extracting/modifying multifunctional properties in bulk oxides utilized in energy and spin-based applications.