English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

Directly photoexcited Dirac and Weyl fermions in ZrSiS and NbAs

MPS-Authors
/persons/resource/persons245678

Parkin,  Stuart S. P.       
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons260360

Ali,  Mazhar       
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

External Resource

https://doi.org/10.1063/1.5055207
(Publisher version)

Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Weber, C. P., Schoop, L. M., Parkin, S. S. P., Newby, R. C., Nateprov, A., Lotsch, B., et al. (2018). Directly photoexcited Dirac and Weyl fermions in ZrSiS and NbAs. Applied Physics Letters, 113(22): 221906. doi:10.1063/1.5055207.


Cite as: https://hdl.handle.net/21.11116/0000-0009-157B-6
Abstract
We report ultrafast optical measurements of the Dirac line-node semimetal ZrSiS and the Weyl semimetal NbAs, using mid-infrared pump photons from 86 meV to 500 meV to directly excite Dirac and Weyl fermions within the linearly dispersing bands. In NbAs, the photoexcited Weyl fermions initially form a non-thermal distribution, signified by a brief spike in the differential reflectivity whose sign is controlled by the relative energy of the pump and probe photons. In ZrSiS, electron-electron scattering rapidly thermalizes the electrons, and the spike is not observed. Subsequently, hot carriers in both materials cool within a few picoseconds. This cooling, as seen in the two materials' differential reflectivity, differs in sign, shape, and timescale. Nonetheless, we find that it may be described in a simple model of thermal electrons, without free parameters. The electronic cooling in ZrSiS is particularly fast, which may make the material useful for optoelectronic applications.