Large tunneling anisotropic magnetoresistance mediated by surface states

Hervé, Marie; Balashov, Timofey; Ernst, Arthur; Wulfhekel, Wulf

doi:10.1103/PhysRevB.97.220406

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Large tunneling anisotropic magnetoresistance mediated by surface states

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Ernst, Arthur
Max Planck Institute of Microstructure Physics, Max Planck Society;

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https://doi.org/10.1103/PhysRevB.97.220406
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Hervé, M., Balashov, T., Ernst, A., & Wulfhekel, W. (2018). Large tunneling anisotropic magnetoresistance mediated by surface states. Physical Review B, 97(22): 220406(R). doi:10.1103/PhysRevB.97.220406.

Cite as: https://hdl.handle.net/21.11116/0000-0009-28D9-6

Abstract

We investigate the tunneling anisotropic magnetoresistance (TAMR) in thick hcp Co films at cryogenic temperatures using scanning tunneling microscopy. At around −350mV, a strong TAMR up to 30% is found with a characteristic voltage dependence and a reversal of sign. With the help of ab initio calculations, the TAMR can be traced back to a spin-polarized occupied surface state that experiences a strong spin-orbit interaction leading to a magnetization direction depending on hybridization with bulk states.