Help Privacy Policy Disclaimer
  Advanced SearchBrowse




Journal Article

Large tunneling anisotropic magnetoresistance mediated by surface states


Ernst,  Arthur
Max Planck Institute of Microstructure Physics, Max Planck Society;

External Resource
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available

Hervé, M., Balashov, T., Ernst, A., & Wulfhekel, W. (2018). Large tunneling anisotropic magnetoresistance mediated by surface states. Physical Review B, 97(22): 220406(R). doi:10.1103/PhysRevB.97.220406.

Cite as: https://hdl.handle.net/21.11116/0000-0009-28D9-6
We investigate the tunneling anisotropic magnetoresistance (TAMR) in thick hcp Co films at cryogenic temperatures using scanning tunneling microscopy. At around −350mV, a strong TAMR up to 30% is found with a characteristic voltage dependence and a reversal of sign. With the help of ab initio calculations, the TAMR can be traced back to a spin-polarized occupied surface state that experiences a strong spin-orbit interaction leading to a magnetization direction depending on hybridization with bulk states.