Deutsch
 
Hilfe Datenschutzhinweis Impressum
  DetailsucheBrowse
  1. Datensatz ansehen / 
  2. Datensatz Übersicht

Datensatz

DATENSATZ AKTIONENEXPORT
Zur Ablage hinzufügen
  Lokale TagsFreigabegeschichteDetailsÜbersicht

Freigegeben
Zeitschriftenartikel

Atomic and electronic structure of the clean and adsorbate covered (0001) surface of the topological insulator Bi2Se3

MPG-Autoren
/persons/resource/persons260281

Meyerheim,  Holger L.
Max Planck Institute of Microstructure Physics, Max Planck Society;

Tusche,  Christian
Max Planck Institute of Microstructure Physics, Max Planck Society;

Externe Ressourcen

https://doi.org/10.1002/pssr.201800078
(Verlagsversion)

Volltexte (beschränkter Zugriff)
Für Ihren IP-Bereich sind aktuell keine Volltexte freigegeben.
Volltexte (frei zugänglich)
Es sind keine frei zugänglichen Volltexte in PuRe verfügbar
Ergänzendes Material (frei zugänglich)
Es sind keine frei zugänglichen Ergänzenden Materialien verfügbar
Zitation

Meyerheim, H. L., & Tusche, C. (2018). Atomic and electronic structure of the clean and adsorbate covered (0001) surface of the topological insulator Bi2Se3. Physica Status Solidi RRL - Rapid Research Letters, 2018: 1800078. doi:10.1002/pssr.201800078.


Zitierlink: https://hdl.handle.net/21.11116/0000-0009-1437-3
Zusammenfassung
We review recent progress in the characterization of the atomic and electronic structure of pristine and adsorbate-covered Bi2Se3(0001) using state-of-the-art analysis tools like surface X-ray diffraction, X-ray absorption fine structure, and spin- and momentum-resolved photoemission spectroscopy. On the basis of several examples we show how the topological surface state is modified by structural modifications. One example is the shift of the Dirac point of the pristine Bi2Se3(0001) surface induced by trace amounts of carbon and its concomitant expansion of the topmost inter-layer spacing. Dosing with atomic hydrogen leads to the complete removal of selenium within the top quintuple layer leaving behind a bismuth bilayer on selenium-terminated Bi2Se3(0001) thereby leading to the appearance of hole-like Rashba-split surface states. Gold deposited by molecular beam epitaxy substitutes bismuth within the near surface region involving an opening of a gap in the topological surface state.