English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

High performance Al3Sc alloy doped Al3Sc-Sb2Te chalcogenides for phase change memory application

MPS-Authors

Zhou,  Xilin
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

External Resource
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Zhang, S., Wu, L., Song, W., Zhou, X., Song, Z., Shi, J., et al. (2018). High performance Al3Sc alloy doped Al3Sc-Sb2Te chalcogenides for phase change memory application. Journal of Materials Chemistry C, 6, 4177-4182. doi:10.1039/C8TC00590G.


Cite as: https://hdl.handle.net/21.11116/0000-0009-273A-B
Abstract
An Al3Sc alloy doped Al3Sc–Sb2Te chalcogenide was put forward to avoid oxidation of pure Sc and enhance data retention ability. Compared with conventional Ge2Sb2Te5 and Sc-doped Sc0.2Sb2Te3 materials, the Al3Sc alloy doped Al3Sc–Sb2Te chalcogenide has much better thermal stability and data retention. X-ray diffraction and transmission electron microscopy analysis reveal that the structure of Al3Sc–Sb2Te has no obvious change compared with Sb2Te, except for the refined grain size. The Al3Sc–Sb2Te based device shows excellent reversible SET–RESET properties with a suitable operation window and a low power consumption of 1.38 × 10-11 J. In addition, a good cyclability of 1 × 106 cycles can be obtained with a large resistance ratio of about 102. Our calculations reveal that Al and Sc atoms prefer bonding with Te atoms. These stable local patterns stabilize glassy states and result in high stability.