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Direct observation of a surface resonance state and surface band inversion control in black phosphorus

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Sanna,  A.
Max Planck Institute of Microstructure Physics, Max Planck Society;

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Citation

Ehlen, N., Sanna, A., Senkovskiy, B. V., Petaccia, L., Fedorov, A. V., Profeta, G., et al. (2018). Direct observation of a surface resonance state and surface band inversion control in black phosphorus. Physical Review B, 97(4): 045143. doi:10.1103/PhysRevB.97.045143.


Cite as: https://hdl.handle.net/21.11116/0000-0008-999C-C
Abstract
We report a Cs-doping-induced band inversion and the direct observation of a surface resonance state with an elliptical Fermi surface in black phosphorus (BP) using angle-resolved photoemission spectroscopy. By selectively inducing a higher electron concentration (1.7×1014cm-2) in the topmost layer, the changes in the Coulomb potential are sufficiently large to cause surface band inversion between the parabolic valence band of BP and a parabolic surface state around the Γ point of the BP Brillouin zone. Tight-binding calculations reveal that band gap openings at the crossing points in the two high-symmetry directions of the Brillouin zone require out-of-plane hopping and breaking of the glide mirror symmetry. Ab initio calculations are in very good agreement with the experiment if a stacking fault on the BP surface is taken into account. The demonstrated level of control over the band structure suggests the potential application of few-layer phosphorene in topological field-effect transistors.