Frequency-dependent conductivity in pure and iodine-doped α- (BEDT-TTF)2I3

Przybylski, M.; Helberg, H.W.; Schweitzer, D.; Keller, H.J.

doi:10.1016/0379-6779(87)90353-5

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Frequency-dependent conductivity in pure and iodine-doped α- (BEDT-TTF)2I3

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Schweitzer, D.
Department of Molecular Physics, Max Planck Institute for Medical Research, Max Planck Society;

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Keller, H.J.
Department of Molecular Physics, Max Planck Institute for Medical Research, Max Planck Society;

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https://www.sciencedirect.com/science/article/pii/0379677987903535/pdf?md5=dc0327416a39d62f4ed4da339ac606f9&pid=1-s2.0-0379677987903535-main.pdf
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Citation

Przybylski, M., Helberg, H., Schweitzer, D., & Keller, H. (1987). Frequency-dependent conductivity in pure and iodine-doped α- (BEDT-TTF)2I3. Synthetic Metals, 19(1-3), 191-196. doi:10.1016/0379-6779(87)90353-5.

Cite as: https://hdl.handle.net/21.11116/0000-0008-6826-9

Abstract

Measurements of the microwave conductivity at 10 GHz show a plateau below the metal-insulator transition at 135 K in contrast to the further dropping dc conductivity. In pure material the plateau is independent of frequency (4 GHz, 10 GHz, and 22 GHz), but in the temperature range above 135 K strong frequency dependence is observed.

Iodine doping causes frequency dependence also in the plateau range. Particular doping rates give rise to several conductivity behaviors for different crystal directions. The results are discussed referring to CDW depinning and relaxation processes.